Display panel and electronic device

ABSTRACT

The present disclosure provides a display panel and an electronic device. In the display panel, a contact area between a support pillar and a bottom layer is increased, without changing a size of a single sub-pixel, thereby alleviating a technical problem that the support pillar easily peels off in an existing 8K ultra-high-resolution electronic device. Moreover, by adjusting voltage drop values of clock input transistors in different GOA units, the voltage drop value between each of the GOA units and clock driving chips is approximately the same.

FIELD OF INVENTION

The present disclosure relates to the technical field of displays, andin particular to a display panel and an electronic device.

BACKGROUND OF DISCLOSURE

With the development of display technology, the resolution of electronicdevices, such as display screens, TVs, and mobile phones, is gettinghigher and higher. The number of pixels increases corresponding to theincrease in resolution. The increase in the number of the pixels bringsvarious technical challenges required to be overcome.

For example, the area of a single sub-pixel of an 8K resolutionelectronic device is one-quarter of the area of a single sub-pixel of a4K resolution electronic device, accompanied by a reduction in thecontact area between a support pillar (ps) and a bottom layer in thepanel. In the 8K resolution electronic devices, the contact area betweenthe support pillar and the bottom layer is 20 μm*20 μm or even smaller.Such a small contact area causes the support pillar to easily peel offfrom the bottom layer, and the peeling of the support pillars causes theproblems, such as blank edges occurring to the liquid crystals andabnormal pressure on the whole surface.

Moreover, loading (voltage drop) of the 8K ultra-high-resolutionelectronic device is serious, the charging time is short, and it isdriven by a gate on array (GOA, the gate drive circuit is integratedonto the array substrate) and thick copper design, so that theultra-high resolution electronic device is extremely sensitive to theimpedance difference between clock (CK) signals in GOA. The resolutionof the 8K electronic device is 7680*4320, there are a total of 4320 rowsof GOA units, and a GOA drive architecture employs 12 CK signal lines(that is, 12 clock signal lines). The impedance difference of the CKsignal lines can reach the level of thousands of ohms. As a result,there is a difference between the CK pattern and the scan line waveformoutput from the corresponding GOA units, which in turn causes problems,such as horizontal lines occurring to the panel display.

Therefore, the existing 8K ultra-high-resolution electronic device hasat least the technical problems that the support pillars easily peeloff, and the difference in CK impedance causes the difference in theoutput signals of the GOA units. The problems need to be improved.

SUMMARY OF INVENTION Technical Problems

The present disclosure provides a display panel and an electronic deviceto alleviate the technical problems in the existing 8Kultra-high-resolution electronic device that the support pillar easilypeels off, and the difference in CK impedance causes the difference inthe output signal of the GOA units.

Technical Solutions

To solve the above problems, the technical solutions provided by thisapplication are as follows:

The present disclosure provides a display panel including:

a first substrate;

a second substrate disposed opposite the first substrate;

a support pillar formed on the first substrate; and

a liquid crystal filled in a sealed space formed between the firstsubstrate and the second substrate;

wherein in a contact region contacting the support pillar, a contactlayer of the first substrate contacting the support pillar forms aprotrusion-depression pattern, the protrusion-depression patternincreases a contact area between the contact layer and the supportpillar, and the protrusion-depression pattern includes a target patternformed by at least one of protrusions, depressions, or a combination ofprotrusions and depressions of the contact layer;

in a non-display area, the display panel is also provided with:

m GOA units arranged in a column direction, wherein each of the GOAunits includes a pull-up module, and each of the pull-up modulesincludes a clock input transistor connected to a clock signal;

n clock signal lines extending in the column direction and arranged inparallel; and

m clock signal connection lines extending in a row direction andarranged in parallel, wherein the clock signal connection lines haveone-to-one correspondence to the GOA units, for connecting the clockinput transistor of the pull-up module in each of the GOA units to acorresponding one of the clock signal lines;

wherein the n clock signal lines include an clock signal line n1 and anclock signal line n2, the clock signal line n2 is formed near a side ofthe clock signal line n1 away from the GOA units, and a voltage dropvalue connected to the clock input transistor of the pull-up module inthe GOA unit m1 of the clock signal line n1 is greater than a voltagedrop value connected to the clock input transistor of the pull-up modulein the GOA unit m2 of the clock signal line n2.

In a display panel of the present disclosure, each of the clock inputtransistors includes a plurality of sub-transistors connected in anarray, and a number of the sub-transistors of the clock input transistorof the pull-up module in the GOA unit m1 is greater than a number of thesub-transistors of the clock input transistor of the pull-up module inthe GOA unit m2.

In a display panel of the present disclosure, the GOA unit n includes:

a pull-up control module connected to a first node, and configured topull up a potential of the first node during a display period;

a logical addressing module including a second node, wherein the logicaladdressing module is connected to the first node, is configured to pullup a potential of the second node twice during the display period, andpull up the potential of the first node by the second node during ablank period;

the pull-up module connected to the first node and configured to pull upa potential of a stage n stage transmission signal, a first outputsignal and a second output signal;

a first pull-down module connected to the first node, and configured topull down the potential of the first node during the blank period;

a second pull-down module connected to the first node and a third node,and configured to pull down the potential of the first node and apotential of the third node respectively during the display period;

a third pull-down module connected to the third node and the secondpull-down module, and configured to pull down the potential of the thirdnode during the blank period;

a first pull-down maintenance module including the third node, whereinthe first pull-down maintenance module is connected to the first nodeand the first pull-down module for maintaining the low potential of thefirst node;

a second pull-down maintenance module connected to the third node andthe pull-up module, and configured to maintain the low potential of thestage n stage transmission signal, the first output signal, and thesecond output signal.

In a display panel of the present disclosure, the first substrateincludes a base substrate, a black matrix formed on the base substrate,and a color filter layer formed on the black matrix, and a supportpillar formed on the color filter layer and located in a region wherethe color filter layer overlaps the black matrix, and the color filterlayer has a protrusion-depression pattern formed in the contact regioncontacting the support pillar.

In a display panel of the present disclosure, the black matrix alsoforms a protrusion-depression pattern in the contact region between thecolor filter layer and the support pillar.

In a display panel of the present disclosure, the first substrateincludes a base substrate, a drive circuit layer formed on the basesubstrate, and a planarization layer formed on the drive circuit layer;wherein the support pillar is formed on the planarization layer, and theplanarization layer has a protrusion-depression pattern in the contactregion contacting the support pillar.

In a display panel of the present disclosure, the first substrateincludes a base substrate, a drive circuit layer formed on the basesubstrate, a color resist layer formed on the drive circuit layer, and aplanarization layer formed on the color resist layer; wherein thesupport pillar is formed on the planarization layer, and theplanarization layer has a protrusion-depression pattern in the contactregion contacting the support pillar.

In a display panel of the present disclosure, the color resist layeralso forms a protrusion-depression pattern in the contact region betweenthe planarization layer and the support pillar.

In a display panel of the present disclosure, a shape of the targetpattern is a grid.

In a display panel of the present disclosure, a contact area between adrain of the clock input transistor of the pull-up module in the GOAmodule m1 and an active layer is smaller than that a contact areabetween a drain of the clock input transistor of the pull-up module inthe GOA module m2 and the active layer.

The present disclosure also provides an electronic device including adisplay panel comprising:

m GOA units arranged in a column direction, wherein each of the GOAunits includes a pull-up module, and each of the pull-up modulesincludes a clock input transistor connected to a clock signal;

n clock signal lines extending in the column direction and arranged inparallel; and

m clock signal connection lines extending in a row direction andarranged in parallel, wherein the n clock signal connection lines haveone-to-one correspondence to the GOA units, for connecting the clockinput transistor of the pull-up module in each of the GOA units to acorresponding one of the clock signal lines;

wherein the clock signal lines include an clock signal line n1 and anclock signal line n2, the clock signal line n2 is formed near a side ofthe clock signal line n1 away from the GOA units, and a voltage dropvalue connected to the clock input transistor of the pull-up module inthe GOA unit m1 of the clock signal line n1 is greater than a voltagedrop value connected to the clock input transistor of the pull-up modulein the GOA unit m2 of the clock signal line n2.

In an electronic device of the present disclosure, a size of the clockinput transistor of the pull-up module in the GOA unit m1 is larger thana size of the clock input transistor of the pull-up module in the GOAunit m2.

In an electronic device of the present disclosure, each of the clockinput transistors includes a plurality of sub-transistors connected inan array, and a number of the sub-transistors of the clock inputtransistor of the pull-up module in the GOA unit m1 is greater than anumber of the sub-transistors of the clock input transistor of thepull-up module in the GOA unit m2.

In an electronic device of the present disclosure, an area of a sourceof the clock input transistor of the pull-up module in the GOA unit m1is larger than an area of a source of the clock input transistor of thepull-up module in the GOA unit m2; and/or an area of a drain of theclock input transistor of the pull-up module in the GOA unit m1 islarger than an area of a drain of the clock input transistor of thepull-up module in the GOA unit m2.

In an electronic device of the present disclosure, a contact areabetween a source of the clock input transistor of the pull-up module inthe GOA module m1 and an active layer is smaller than that a contactarea between a source of the clock input transistor of the pull-upmodule in the GOA module m2 and the active layer.

In an electronic device of the present disclosure, the GOA unit nincludes:

a pull-up control module connected to a first node, and configured topull up a potential of the first node during a display period;

a logical addressing module including a second node, wherein the logicaladdressing module is connected to the first node, is configured to pullup a potential of the second node twice during the display period, andpull up the potential of the first node by the second node during ablank period;

the pull-up module connected to the first node and configured to pull upa potential of a stage n stage transmission signal, a first outputsignal and a second output signal;

a first pull-down module connected to the first node, and configured topull down the potential of the first node during the blank period;

a second pull-down module connected to the first node and a third node,and configured to pull down the potential of the first node and apotential of the third node respectively during the display period;

a third pull-down module connected to the third node and the secondpull-down module, and configured to pull down the potential of the thirdnode during the blank period;

a first pull-down maintenance module including the third node, whereinthe first pull-down maintenance module is connected to the first nodeand the first pull-down module for maintaining the low potential of thefirst node;

a second pull-down maintenance module connected to the third node andthe pull-up module, and configured to maintain the low potential of thestage n stage transmission signal, the first output signal, and thesecond output signal.

In an electronic device of the present disclosure, the pull-up controlmodule includes a first transistor and a second transistor; a gate and afirst electrode of the first transistor and a gate of the secondtransistor all are connected to a stage n−2 signal transmission; asecond electrode of the first transistor is connected to a firstelectrode and a fourth node of the second transistor; and a secondelectrode of the second transistor is connected to the first node.

In an electronic device of the present disclosure, material resistivityof a source drain layer of the clock input transistor of the pull-upmodule in the GOA unit m1 is greater than material resistivity of asource drain layer of the clock input transistor of the pull-up modulein the GOA unit m2.

In an electronic device of the present disclosure, a thickness of asource drain layer of the clock input transistor of the pull-up modulein the GOA unit m1 is smaller than a thickness of a source drain layerof the clock input transistor of the pull-up module in the GOA unit m2.

In an electronic device of the present disclosure, a contact areabetween a source of the clock input transistor of the pull-up module inthe GOA module m1 and an active layer is smaller than that a contactarea between a source of the clock input transistor of the pull-upmodule in the GOA module m2 and the active layer.

Beneficial effect of the present disclosure: The present disclosureprovides a display panel and an electronic device. The display panelincludes a first substrate; a second substrate disposed opposite thefirst substrate; a support pillar formed on the first substrate; and aliquid crystal filled in a sealed space formed between the firstsubstrate and the second substrate; wherein in a contact regioncontacting the support pillar, a contact layer of the first substratecontacting the support pillar forms a protrusion-depression pattern, andthe protrusion-depression pattern increases a contact area between thecontact layer and the support pillar. Based on this structure, thecontact area between the support pillar and the bottom layer isincreased, and there is no need to change the size of the singlesub-pixel, thereby alleviating the technical problem of the existing 8Kultra-high-resolution electronic device that the support pillar easilypeels off. Moreover, the clock signal lines include an clock signal linen1 and an clock signal line n2, the clock signal line n2 is formed neara side of the clock signal line n1 away from the GOA units, and avoltage drop value connected to the clock input transistor of thepull-up module in the GOA unit m1 of the clock signal line n1 is greaterthan a voltage drop value connected to the clock input transistor of thepull-up module in the GOA unit m2 of the clock signal line n2. Based onthis circuit structure, by adjusting the voltage drop values of theclock input transistors in different GOA units, the voltage drop valuescaused by the different lengths of the clock signal lines and the clocksignal connection lines are compensated, so that the voltage drop valuebetween each GOA unit and the clock driving chip is approximately thesame, thereby alleviating the CK impedance difference existing in the 8Kultra-high resolution electronic device, and improving the technicalproblem of the difference of the output signal of the GOA units existingin the 8K ultra-high resolution electronic device.

BRIEF DESCRIPTION OF DRAWINGS

In order clearly explain the embodiments or the technical solutions, thedrawings required in the description of the embodiments are brieflyintroduced. Obviously, the drawings in the following description areonly used for some embodiments. Those of ordinary skill in the art canobtain other drawings based on these drawings without paying anyinventive effort.

FIG. 1 is a schematic structural diagram of a display panel provided byan embodiment of the present disclosure.

FIG. 2 is a schematic design diagram of a target pattern provided by anembodiment of the present disclosure.

FIG. 3A to FIG. 3G are schematic design diagrams of display panelsprovided by embodiments of the present disclosure.

FIG. 4 is another schematic structural diagram of a display panelprovided by an embodiment of the present disclosure.

FIG. 5A to FIG. 5E are schematic diagrams of a color filter substrateand a corresponding mask provided by embodiments of the presentdisclosure.

FIG. 6 is a schematic circuit diagram of a display panel provided by anembodiment of the present disclosure.

FIG. 7 is a schematic circuit diagram of a GOA circuit provided by anembodiment of the present disclosure.

FIG. 8A to FIG. 8C are timing diagrams of embodiments of the presentdisclosure.

FIG. 9A to FIG. 9O are schematic diagrams of preparation of a displaypanel provided by an embodiment of the present disclosure.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The following description of the embodiments with reference to theaccompanying drawings is used to illustrate particular embodiments ofthe present disclosure. The directional terms referred in the presentdisclosure, such as “upper”, “lower”, “front”, “back”, “left”, “right”,“inner”, “outer”, “side surface”, etc. are only directions with regardto the accompanying drawings. Therefore, the directional terms used fordescribing and illustrating the present disclosure are not intended tolimit the present disclosure.

The technical solutions in the embodiments of the present disclosure areclearly and completely described as follows with reference to theaccompanying drawings in the embodiments. It is apparent that thedescribed embodiments are only a part of the embodiments of the presentdisclosure, and not all of the embodiments. All other embodimentsobtained by a person skilled in the art based on the embodiments of thepresent disclosure without inventive efforts are within the scope of thepresent disclosure.

In the description of the present disclosure, it is to be understoodthat the oriental and the positional relationships of the terms“center”, “longitudinal”, “transverse”, “length”, “width”, “thickness”,“upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”,“horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”,“counterclockwise”, etc. are based upon the oriental or positionalrelationship shown in the drawings, are merely for facilitating andsimplifying the description of the present disclosure, and do notindicate or imply that the device or components referred to have aspecific orientation, and are constructed and operated in a specificorientation. Therefore, it should not be construed as limiting thedisclosure. Moreover, the terms “first” and “second” are used fordescriptive purposes only and are not to be construed as indicating orimplying a relative importance or implicitly indicating the number ofindicated technical features. Thus, features defining “first” or“second” may include one or more of the described features eitherexplicitly or implicitly. In the description of the present disclosure,the meaning of “a plurality of” is two or more unless specificallydefined otherwise.

In the present disclosure, it is noted that, unless otherwise explicitlyset forth and defined, the terms “mount”, “contact”, and “connect”should be understood broadly, and, for example, may be fixedlyconnected, detachably connected, integrally connected, mechanicallyconnected, electrically connected, directly connected, or indirectlyconnected through an intermediate medium, or internally communicatedwithin two components. For those of ordinary skill in the art, thespecific meaning of these terms in the present disclosure should beunderstood on a basis of a specific case situation.

In the present disclosure, unless otherwise expressly stated anddefined, the description that “a first feature is on or under a secondfeature” may mean that the first feature directly contacts the secondfeature, or mean that the first feature contacts the second feature viaanother feature therebetween, rather than directly contact the secondfeature. Moreover, the description that “the first feature ison/above/over the second feature” may mean that the first feature isdirectly or obliquely on/above/over the second feature, or just mean thehorizontal height of the first feature is higher than that of the secondfeature. The description that “the first feature is under/below/beneaththe second feature” may mean that the first feature is directly orobliquely under/below/beneath the second feature, or just mean thehorizontal height of the first feature is lower than that of the secondfeature.

The following description provides a number of different embodiments orexamples for implementing the different structures of the presentdisclosure. In order to simplify the present disclosure, components andarrangements of specific examples are described below. Certainly, theexamples are merely exemplary and are not intended to limit the presentdisclosure. In addition, for the sake of simplicity and clarity, thereference numerals and/or the reference letters may repeat in differentexamples in the present disclosure, which does not indicate therelationship between the various discussed embodiments and/orarrangements. Moreover, the examples of various specific processes andmaterials are provided in the present disclosure, but a person ofordinary skill in the art will appreciate the application of otherprocesses and/or the use of other materials.

The present disclosure provides a display panel and an electronic deviceto alleviate the technical problem of an existing 8Kultra-high-resolution electronic device that support pillar easily peelsoff.

In one embodiment, a projection-depression pattern includes a targetpattern formed by a contact layer through at least one of protrusions,depressions, or a combination of protrusions and depressions. Forexample, a contact layer forms a target pattern through depressions inthe following embodiments. In other embodiments, the contact layer mayform the target pattern only by at least one of a protrusion manner or acombination manner of protrusions and depressions. The combinationmanner of protrusions and depressions means that the contact layer formsa part of the target pattern through the protrusions and forms otherparts of the target pattern through the depressions. The specificimplementation methods of these manners are similar to the targetpattern formed by the depressions of the contact layer described in thefollowing embodiments.

As shown in FIG. 1 , the present disclosure provides a display panelincluding:

a first substrate 11;

a second substrate 12 disposed opposite the first substrate 11;

a support pillar 13 formed on the first substrate 11; and

a liquid crystal 14 filled in a sealed space formed between the firstsubstrate 11 and the second substrate 12;

wherein in a contact region contacting the support pillar 13, a contactlayer 111 (that is, the bottom layer described above) of the firstsubstrate 11 contacting the support pillar 13 forms aprotrusion-depression pattern 15, and the protrusion-depression patternincreases a contact area between the contact layer 111 and the supportpillar 13.

The display panel provided by the present embodiment includes a firstsubstrate; a second substrate disposed opposite the first substrate; asupport pillar formed on the first substrate; and a liquid crystalfilled in a sealed space formed between the first substrate and thesecond substrate; wherein in a contact region contacting the supportpillar, a contact layer of the first substrate contacting the supportpillar forms a protrusion-depression pattern, and theprotrusion-depression pattern increases a contact area between thecontact layer and the support pillar. Based on this structure, thecontact area of the support pillar and the bottom layer is increased,and there is no need to change the size of the single sub-pixel, therebyalleviating the technical problem of the existing 8Kultra-high-resolution electronic device that the support pillar easilypeels off.

In an embodiment, as shown in FIG. 2 , the shape of theprotrusion-depression pattern 15 provided in the embodiment of thepresent disclosure corresponds to the target pattern in a grid shape. Insome embodiments, the grid size ranges from 1 to 6 μm, the intervalranges from 1 to 6 μm, and the depth is less than 0.5 μm. Performingphotolithography on the contact layer (usually an organic materiallayer) with a photomask can realize this embodiment. For example, bychanging the grid design of the RGB/PFA photomask here for thearrangement region of the protrusion-depression pattern, and using thephotomask with a transmittance of 80% to 90%, the transmittance isreduced, and part of the photoresist is removed by the developer,thereby meeting the requirement of reducing the layer thickness by 0.5μm to form the protrusion-depression pattern.

In one embodiment, the display panel as shown in FIG. 1 has a colorfilter on array (COA, RGB on an array substrate) structure. As shown inFIG. 3A, the first substrate 11 includes a base substrate 11 a 1 and ablack matrix 11 a 2 formed on the base substrate. The black matrix 11 a2 is arranged around an array and an opening corresponding to asub-pixel light emitting region. The support pillars 13 are formed onthe black matrix 11 a 2. That is, the black matrix 11 a 2 is theabove-mentioned contact layer 111. The black matrix 11 a 2 forms theprotrusion-depression patterns 15 in the contact regions contacting thesupport pillars 13.

In one embodiment, the display panel as shown in FIG. 1 has a non-colorfilter on array (COA, RGB on an array substrate) structure. As shown inFIG. 3B, the first substrate 11 includes a base substrate 11 b 1 and ablack matrix 11 b 2 formed on the base substrate. The black matrix 11 b2 is arranged around an array and a color filter layer 11 b 3corresponding to a sub-pixel light emitting region. The support pillars13 are formed on the black matrix 11 a 2. That is, the black matrix 11 b2 is the above-mentioned contact layer 111. The black matrix 11 b 2forms the protrusion-depression patterns 15 in the contact regionscontacting the support pillars 13.

In one embodiment, the display panel as shown in FIG. 1 has a non-colorfilter on array (COA, RGB on an array substrate) structure, wherein thecolor filter layer covers the black matrix. As shown in FIG. 3C, thefirst substrate 11 includes a base substrate 11 c 1, a black matrix 11 c2 formed on the base substrate, and a color filter layer 11 c 3 formedon the black matrix 11 c 2. The support pillars 13 are formed on thecolor filter layer 11 c 3 in a region where the color filter layer 11 c3 overlaps the black matrix 11 c 2. That is, the color filter layer 11 c3 is the above-mentioned contact layer 111. The color filter layer 11 c3 forms the protrusion-depression patterns 15 in the contact regionscontacting the support pillars 13.

In one embodiment, the display panel as shown in FIG. 1 has a non-colorfilter on array (COA, RGB on an array substrate) structure, wherein thecolor filter layer covers the black matrix. As shown in FIG. 3D, thefirst substrate 11 includes a base substrate 11 d 1, a black matrix 11 d2 formed on the base substrate, and a color filter layer 11 d 3 formedon the black matrix 11 d 2. The support pillars 13 are formed on thecolor filter layer 11 d 3 in a region where the color filter layer 11 d3 overlaps the black matrix 11 d 2. That is, the color filter layer 11 d3 is the above-mentioned contact layer 111. The color filter layer 11 d3 forms the protrusion-depression patterns 15 in the contact regionscontacting the support pillars 13. The black matrix 11 d 2 forms theprotrusion-depression patterns 15 in the contact regions wherein thecolor filter layer 11 d 3 contacts the support pillars 13.

In one embodiment, the display panel as shown in FIG. 1 has a non-colorfilter on array (COA, RGB on an array substrate) structure, which isalso a PS on array (POA, PS on an array substrate) structure. As shownin FIG. 3E, the first substrate 11 includes a base substrate 11 e 1, adrive circuit layer 11 e 2 formed on the base substrate, and aplanarization layer 11 e 3 formed on the drive circuit layer 11 e 2. Thesupport pillars 13 are formed on the planarization layer 11 e 3. Thatis, the planarization layer 11 e 3 is the above-mentioned contact layer111. The planarization layer 11 e 3 forms the protrusion-depressionpatterns 15 in the contact regions contacting the support pillars 13.

In one embodiment, the display panel as shown in FIG. 1 has a colorfilter on array (COA, RGB on an array substrate) structure, which isalso a PS on array (POA, PS on an array substrate) structure. As shownin FIG. 3F, the first substrate 11 includes a base substrate 11 f 1, adrive circuit layer 11 f 2 formed on the base substrate, a color filterlayer 11 f 3 formed on the drive circuit layer 11 f 2, and aplanarization layer 11 f 4 formed on the color filter layer 11 f 3. Thesupport pillars 13 are formed on the planarization layer 11 f 4. Thatis, the planarization layer 11 f 4 is the above-mentioned contact layer111. The planarization layer 11 f 4 forms the protrusion-depressionpatterns 15 in the contact regions contacting the support pillars 13.

In one embodiment, the display panel as shown in FIG. 1 has a colorfilter on array (COA, RGB on an array substrate) structure, which isalso a PS on array (POA, PS on an array substrate) structure. As shownin FIG. 3G, the first substrate 11 includes a base substrate 11 g 1, adrive circuit layer 11 g 2 formed on the base substrate, a color filterlayer 11 g 3 formed on the drive circuit layer 11 g 2, and aplanarization layer 11 f 4 formed on the color filter layer 11 g 3. Thesupport pillars 13 are formed on the planarization layer 11 g 4. Thatis, the planarization layer 11 g 4 is the above-mentioned contact layer111. The planarization layer 11 g 4 forms the protrusion-depressionpatterns 15 in the contact regions contacting the support pillars 13.The color filter layer 11 g 3 forms the protrusion-depression patterns15 in the contact regions contacting the support pillars 13.

In one embodiment, material of the planarization layer is PFA(macromolecule organic transparent material), a thickness of theplanarization layer is about 1.5 μm, and a thickness of the blackmatrix, the color filter layer, and the color resist layer ranges from 2to 3 μm. Then, based on the thicknesses, after the protrusion-depressionpattern 15 is formed, the original function of the layers are notaffected.

In one embodiment, the support pillars include main support pillars andsub-support pillars. In the regions of the main support pillars and thesub-support pillars, the contact layer may form theprotrusion-depression patterns 15 with the same parameters (includingsizes, shapes and depths, etc.) with different parameters (includingsizes, shapes, depths, etc.). For example, the depth of theprotrusion-depression pattern 15 formed by the contact layer at the mainsupport pillars is greater than the depth of the protrusion-depressionpattern 15 formed by the contact layer at the sub-support pillars.

For the 8K ultra-high resolution display panel, at least the followingtechnical problems still exist even when the technical problem that thesupport pillars of the 8K electronic device easily peels off isresolved:

The area of a single sub-pixel of an 8K resolution electronic device isone-quarter of the area of a single sub-pixel of a 4 K resolutionelectronic device, accompanied by difficulty in preparing thecorresponding photomask and increased costs. In the actual productmanufacturing process, for display panels with the same resolution butdifferent sizes, due to different areas of individual sub-pixels,photomasks with different sizes need to be developed and prepared. Forexample, in the conventional technology, in the manufacturing processesof 65-inch 8K resolution display panels and 85-inch 8K resolutiondisplay panels, photomasks with different sizes are required, anddevelopment costs are high. The sizes of the photomasks refer to thesizes of light-shielding regions on the photomasks. That is, theexisting 8K electronic devices have the technical problem that preparingthe photomasks with the different sizes is required for the displaypanels with the different sizes.

Sub-pixels of each pixel in the LCD panel are arranged in rows. In thisdisclosure, the arrangement direction of the sub-pixels is a rowdirection, and a direction being perpendicular to the row direction is acolumn direction. A row width value refers to a width value of a certainregion in the row direction.

In this disclosure, a repeating region refers to a region on thephotomask. The photomask is composed of repeating regions distributed inan array. A pixel region refers to a region corresponding to a smallestlight emitting unit (i.e., sub-pixel) in the display panel. The pixelregion includes a light-transmitting region and a light-shielding regionsurrounding the light-transmitting region. In the process of preparingthe display panel, aligning the photomask to the substrate is aligningthe repeating regions of the photomask to the pixel regions of thesubstrate.

In order to solve these technical problems, in an embodiment, as shownin FIG. 4 , the display panel provided by the embodiment of the presentdisclosure includes:

an array substrate 51 forming a driving circuit layer and pixelelectrodes;

a color filter substrate 52 disposed opposite the array substrate 51;

a sealant frame 53 configured to encapsulate the array substrate 51 andthe color filter substrate 52 and forming a sealed space filled withliquid crystals;

a support pillar 54 formed on the array substrate 51 or the color filtersubstrate for supporting the array substrate 51 and the color filtersubstrate 52.

In one embodiment, the technical problem of preparing the photomaskswith the different sizes for the display panels with different sizes isshown in FIG. 5E. FIG. 5E is a schematic diagram of the effect of anexisting photomask. The light shielding region of the photomask isarranged in the middle of the pixel region, as shown in FIG. 5E. The rowwidth value of a single sub-pixel in a 65-inch 8K resolution displaypanel is 52 μm. The row width value of the pixel region of the photomask1 corresponding to the 65-inch 8K resolution display panel is also 52μm. The row width value of a single sub-pixel in a 85-inch 8K resolutiondisplay panel is 72 μm. The row width value of the pixel region of thephotomask 2 corresponding to the 85-inch 8K resolution display panel isalso 72 μm. If the photomasks with the same sizes are used, and, thatis, the row width value of the light shielding region is 28 μm, in therow direction, the single light-transmitting region of the mask 1 has arow width of 12 μm, and the single light-transmitting region of the mask2 has a row width of 22 μm. During photolithography, thelight-transmitting regions forms slits, and light diffracts through theslits. According to the principle of light diffraction, the smaller theslits are, the larger the diffraction range of light is.

The black matrix is a negative photoresist, and regions not exposed tolight are etched to form openings. Then, as shown in FIG. 5E, the rowwidth value of the actual effective light-shielding range of thelight-shielding region of the photomask 1 is 16 μm (that is, thediffraction range of a single slit is 6 μm). The row width value of thelight transmission region of a single sub-pixel of the formed 65-inch 8Kresolution display panel is 16 μm. The row width value of the actualeffective shading range of the light-shielding region of the photomask 2is 18 μm (that is, the diffraction range of a single slit is 5 μm). Therow width value of the light transmission region of a single sub-pixelof the formed 85-inch 8K resolution display panel is 18 μm. All of theseare also in line with the principle of light diffraction. However, thiscauses the row width of the light transmission region of a singlesub-pixel of the 65-inch 8K resolution display panel to be differentfrom the row width of the light transmission region of a singlesub-pixel of the 85-inch 8K resolution display panel, and then, when theRGB color filter layer is being formed, the photomasks with differentsizes need to be used. Therefore, the existing 8K electronic deviceshave at least the technical problem it is required to prepare thephotomasks with different sizes for the display panels with differentsizes, and the technical problem needs to be improved. Then, thisdisclosure provides a photomask, a display panel, and an electronicdevice, which can solve the technical problem that it is required toprepare the photomasks with different sizes for the display panels withdifferent sizes in at least the existing 8K electronic devices.

In order to solve these problems, as shown in FIG. 5A to FIG. 5 b , thecolor filter substrate includes:

abase substrate 521;

a black matrix 522 formed on the base substrate, and including anopening into which a color filter layer 523 is filled; and

the color filter layer 523 formed in the opening.

As shown in FIG. 5A and FIG. 5B, the color filter substrate includes aplurality of pixel regions W arranged in an array and corresponding tosub-pixels. The pixel regions W include first regions W1 correspondingto the openings, and second regions W2 surrounding the first regions W1.The black matrix 522 is formed in the second regions W2. The secondregion W2 includes a first side region D1 and a second side region D2arranged in the row direction and in parallel, and a third side regionD3 and a fourth side region D4 arranged in the column direction and inparallel. A first distance L1 from a side of the first side region D1away from the opening to the opening is less than a second distance L2from a side of the second side region D2 away from the opening to theopening.

In one embodiment, a driving circuit is formed in a range of the thirdside region D3, and the protrusion-depression pattern is formed in arange of the third side region D3. For example, theprotrusion-depression pattern is formed in the third side region D3.

Based on this structure, the photomasks with the same size can be usedin the display panels with the same resolution and different size. Thedifference between these photomasks is only the distance between theopening pattern and the edge of the pixel region, which solves thetechnical problem that it is required to prepare the photomasks withdifferent sizes for the display panels with different sizes in at leastthe existing 8K electronic devices, and reduces the costs of productproduction.

In one embodiment, in the 85-inch or more than 85-inch 8K resolutiondisplay panel, in the row direction, a value of the first distance L1 isless than 18 μm, and a value of the second distance L2 is greater than18 μm.

In one embodiment, in the 85-inch 8K resolution display panel, in therow direction, a width of the opening is 16 μm, and the sum of the firstdistance L1 and the second distance L2 is 56 μm.

In order to prepare the color filter substrate as shown in FIG. 5A toFIG. 5B, the present disclosure also provides the photomask as shown inFIG. 5C to FIG. 5D. As shown in FIG. 5C to 5D, the photomask provided bythe present disclosure includes:

a photomask substrate M11;

an opening pattern M12 formed on the photomask substrate M11, which isused to form the black matrix or the color filter layer of the colorfilter substrate, and the black matrix includes the openings into whichthe color filter layer is filled;

wherein the photomask includes a plurality of repeating regions Z, andthe repeating regions Z include first regions Z1 corresponding to theopening patterns M12 and second regions Z2 surrounding the first regionsZ1. The second region Z2 includes a first side region C1 and a secondside region C2 arranged in the row direction and in parallel, and athird side region C3 and a fourth side region C4 arranged in the columndirection and in parallel. A third distance h1 from a side of the firstside region C1 away from the opening pattern M12 to the opening patternM12 is less than a fourth distance h2 from a side of the second sideregion C2 away from the opening pattern M12 to the opening pattern M12.

The photomask does not employ the existing photomask opening pattern,such as the light-shielding region located in the center of therepeating regions, and moves the light-shielding region to the side, sothat the black matrix opening or color filter layer with a desired sizecan be obtained based on the diffraction effect. The size of the openingpattern need not be changed. Based on this structure, the photomask withthe same sizes can be used in the display panel with the same resolutionand different sizes. The difference between these masks is only thedistance between the opening pattern and the edge of the pixel region,which solves the technical problem that it is required to prepare thephotomasks with different sizes for the display panels with differentsizes in at least the existing 8K electronic devices, and reduces thecosts of product production.

In one embodiment, a light-shielding pattern corresponding to the targetpattern of the protrusion-depression pattern is formed in the third sideregion C3 of the photomask. The light transmittance of thelight-shielding pattern ranges from 80% to 90%, so as to form adepressed target pattern in the corresponding region of the black matrixas the protrusion-depression pattern.

In one embodiment, a fifth distance h3 from a side of the third sideregion C3 away from the opening pattern M12 to the opening pattern M12is equal to a sixth distance h4 from a side of the fourth side region C4away from the opening pattern M12 to the opening pattern M12.

In one embodiment, when the photomask is used to prepare an 85-inch ormore than 85-inch 8K resolution display panel, a value of the thirddistance h1 is less than 12 μm, and a value of the fourth distance h2 isgreater than 32 μm.

In one embodiment, when the photomask is used to prepare an 85-inch ormore than 85-inch 8K resolution display panel, a value of the thirddistance h1 is less than 10 μm, and a value of the fourth distance h2 isgreater than 34 μm.

In one embodiment, when the photomask is used to prepare an 65-inch ormore than 65-inch 8K resolution display panel, a width value of theopening pattern M12 in the row direction is 28 μm.

In one embodiment, when the photomask is used to prepare an 85-inch 8Kresolution display panel, in the photomask of the present disclosure, asum of the third distance h1 and the fourth distance h2 is 44 μm.

In one embodiment, the opening pattern M12 is formed by patterning amaterial with a light transmittance of 0, and the material includesmetallic chromium and the like.

In one embodiment, a straight line with a light transmittance of 0 isformed between adjacent repeating regions Z to ensure the slit effect. Awidth of the straight line is less than 1 μm, which does not affect thepattern of the black matrix below the region.

In one embodiment, in order to obtain the color filter substrate in theembodiments as shown in FIGS. 5A and 5B, the embodiments of the presentdisclosure further provide the following preparation method of the colorfilter substrate, which includes:

Step 1 of provide a base substrate.

As shown in FIG. 9A, a transparent glass substrate or the like isprovided as the base substrate 91.

Step 2 of forming a black matrix material layer on the base substrate.

As shown in FIG. 9B, the black matrix material layer 92 is formed on thebase substrate 91, such as a transparent glass substrate, whereinmaterial of the black matrix material layer is negative photoresist, andthe regions shielded by the photomask are removed.

Step 3 of aligning a first photomask plate with the base substrate.

As shown in FIG. 9C, the first photomask Y1 is used, and each repeatingregion Z of the first photomask Y1 corresponding to the pixel region Wadopts the design of the embodiment as shown in FIG. 5C and FIG. 5D. Thefirst photomask Y1 is aligned with the base substrate obtained in step2.

Step 4 of patterning the black matrix material to form a black matrix.

As shown in FIG. 9D, by using a device, such as an exposure machine, toperform a photolithography process on the black matrix material layer 92based on the first photomask, a black matrix 93 is obtained.

Step 5 of coating a red color resist material layer.

As shown in FIG. 9E, a red photoresist layer 94 is coated on the entiresurface of the base substrate obtained in step 4, wherein material ofthe red photoresist layer is a positive photoresist, and the regionsshielded by the photomask remain.

Step 6 of aligning the second photomask with the base substrate.

As shown in FIG. 9F, the second photomask Y2 is used, and each repeatingregion Z of the second photomask Y2 only corresponding to the pixelregion W to which red sub-pixels correspond adopts the design of theembodiment as shown in FIG. 5C and FIG. 5D. The second photomask Y2 isaligned with the base substrate obtained in step 5.

Step 7 of patterning the red photoresist layer.

As shown in FIG. 9G, by using a device, such as an exposure machine, toperform a photolithography process on a red photoresist layer 94 basedon the second photomask, the red filter layer 95 is obtained.

Step 8 of coating a green color resist material layer.

As shown in FIG. 9H, a green photoresist layer 96 is coated on theentire surface of the base substrate obtained in step 7, whereinmaterial of the green photoresist layer is a positive photoresist, andthe regions shielded by the photomask remain.

Step 9 of aligning the third photomask with the base substrate.

As shown in FIG. 9I, the third photomask Y3 is used, and each repeatingregion Z of the third photomask Y3 only corresponding to the pixelregion W to which green sub-pixels correspond adopts the design of theembodiment as shown in FIG. 5C and FIG. 5D. The third photomask Y3 isaligned with the base substrate obtained in step 8.

Step 10 of patterning the green photoresist layer.

As shown in FIG. 9J, by using a device, such as an exposure machine, toperform a photolithography process on a green photoresist layer 96 basedon the third photomask, the green filter layer 97 is obtained.

Step 11 of coating a green color resist material layer.

As shown in FIG. 9K, a blue photoresist layer 98 is coated on the entiresurface of the base substrate obtained in step 10, wherein material ofthe blue photoresist layer is a positive photoresist, and the regionsshielded by the photomask remain.

Step 12 of aligning the fourth photomask with the base substrate.

As shown in FIG. 9L, the fourth photomask Y4 is used, and each repeatingregion Z of the fourth photomask Y4 only corresponding to the pixelregion W to which blue sub-pixels correspond adopts the design of theembodiment as shown in FIG. 5C and FIG. 5D. The fourth photomask Y4 isaligned with the base substrate obtained in step 11.

Step 13 of patterning the blue photoresist layer.

As shown in FIG. 9M, by using a device, such as an exposure machine, toperform a photolithography process on a blue photoresist layer 98 basedon the fourth photomask, the blue filter layer 99 is obtained.

Step 14 of preparing a support pillar.

As shown in FIG. 9N, a supporting pillar 910 is prepared on the blackmatrix of the base substrate obtained in step 13.

Step 15 of prepare a planarization layer and a common electrode layer.

As shown in FIG. 9O, on the base substrate obtained in step 14,macromolecular organic particles are used to sequentially prepare aplanarization layer 911, and a transparent conductive material, such asTIO, is used to prepare a common electrode layer 912 on theplanarization layer 911.

In one embodiment, for the technical problem of CK impedance difference,as shown in FIG. 6 , in a non-display region where the sealant frame 53is located, the display panel is provided with:

m GOA units 601 arranged in a column direction, wherein each of the GOAunits 601 includes a pull-up module, and each of the pull-up modulesincludes a clock input transistor connected to a clock signal;

n clock signal lines 602 extending in the column direction and arrangedin parallel; and

m clock signal connection lines 603 extending in a row direction andarranged in parallel, wherein the clock signal connection lines 603 haveone-to-one correspondence to the GOA units 601, for connecting the clockinput transistor of the pull-up module in each of the GOA units 601 to acorresponding one of the clock signal lines 602;

wherein the n clock signal lines include an clock signal line n1 and anclock signal line n2, the clock signal line n2 is formed near a side ofthe clock signal line n1 away from the GOA units, and a voltage dropvalue connected to the clock input transistor of the pull-up module inthe GOA unit m1 of the clock signal line n1 is greater than a voltagedrop value connected to the clock input transistor of the pull-up modulein the GOA unit m2 of the clock signal line n2. n1 is different from n2,and belongs to 1 to n. m1 is different from m2, and belongs to 1 to m.

A 7680*4320 resolution display panel is taken as an example. The displaypanel includes 4320 GOA units 601 and 12 clock signal lines 602 (CK1 toCK12 in FIG. 6 ), and each of the clock signal line 602 is connected to360 GOA units 601. Then it can be foreseen that in the column directionand the row direction, the difference in voltage drop value between theGOA unit 601 (m2) connected to CK12 and the GOA unit 601 (m1) connectedto CK1 is the product of the sum of resistance R1 and R2 and the currentI. The sum of resistance R1 and resistance R2 can reach the level ofkiloohms. Based on the current situation, this disclosure does notemploys the improvement of the voltage drop value of the clock signallines, and originally proposes to adjust parameters of the clock inputtransistors (that is, the thin film transistors connected to theexternal clock signal) in the GOA units to change the correspondingvoltage drop value thereof.

This embodiment provides a display panel including m GOA units arrangedin a column direction, wherein each of the GOA units includes a pull-upmodule, and each of the pull-up modules includes a clock inputtransistor connected to a clock signal; n clock signal lines extendingin the column direction and arranged in parallel; and m clock signalconnection lines extending in a row direction and arranged in parallel,wherein the clock signal connection lines have one-to-one correspondenceto the GOA units, for connecting the clock input transistor of thepull-up module in each of the GOA units to a corresponding one of theclock signal lines; wherein the n clock signal lines include an clocksignal line n1 and an clock signal line n2, the clock signal line n2 isformed near a side of the clock signal line n1 away from the GOA units,and a voltage drop value connected to the clock input transistor of thepull-up module in the GOA unit m1 of the clock signal line n1 is greaterthan a voltage drop value connected to the clock input transistor of thepull-up module in the GOA unit m2 of the clock signal line n2. Based onthis circuit structure, by adjusting the voltage drop values of theclock input transistors in different GOA units, the voltage drop valuescaused by the different lengths of the clock signal lines and the clocksignal connection lines are compensated, so that the voltage drop valuebetween each GOA unit and the clock driving chip is approximately thesame, thereby alleviating the CK impedance difference existing in the 8Kultra-high resolution electronic device, and improving the technicalproblem of the difference of the output signal of the GOA units existingin the 8K ultra-high resolution electronic device.

In one embodiment, the display panel includes an active layer, a firstmetal layer, and a second metal layer. The active layer is patterned toform a channel region of the transistor. The first metal layer ispatterned to form a gate and a gate scan line and a clock signal line.The second metal layer is patterned to form a clock signal connectionline, a source and a drain of the transistor, etc. The CK signal isconnected to the source of the clock input transistor in the GOA unit,and the CK signal is input through the clock signal line (first metallayer), is transmitted to the clock signal connection line (second metallayer) through a via hole, and is connected to the source of the clockinput transistor.

In one embodiment, the parameters of the clock input transistors includemultiple dimensions, such as the sizes of the transistors, theresistivity of the layer material, and the thicknesses of the layers.For the clock input transistors connected to the different clock signallines, only one parameter or multiple parameters may be adjusted, sothat the voltage drop value between the GOA units connecting all of theclock signal lines and the clock driving chips is approximately thesame.

In one embodiment, the voltage drop values of the clock inputtransistors connected to the same clock signal line but belonging to thedifferent GOA units are the same.

In one embodiment, size parameters of the clock input transistorsconnected to the different clock signal lines are different. That is, asize of the sub-transistor of the clock input transistor of the pull-upmodule in the GOA unit m1 is larger than a size of the sub-transistor ofthe clock input transistor of the pull-up module in the GOA unit m2.

In an embodiment, as shown in FIG. 6 , the clock input transistorincludes a plurality of sub-transistors connected in an array. A numberof sub-transistors of the clock input transistor of the pull-up modulein the GOA unit m1 is greater than a number of sub-transistors of theclock input transistor of the pull-up module in the GOA unit m2. In anactual preparation process, each transistor is implemented by using aseries of sub-transistors in an array. The more the number ofsub-transistors in series is, the greater the resistance of thetransistor is. Based upon this, in this embodiment, parameters of thesub-transistors of the transistor can be adjusted. In preparation, thisembodiment can be obtained only by changing the number of thelight-shielding regions of the photomask corresponding to thesub-transistors of the clock input transistor in the different GOAunits.

In one embodiment, an area of the source of the clock input transistorof the pull-up module in the GOA unit m1 is larger than an area of thesource of the clock input transistor of the pull-up module in the GOAunit m2. Under the condition that active layer parameters, gateparameters, drain parameters (including material resistivity, area, andthickness), and partial source parameters (including materialresistivity, and thickness), the larger the area of the source is, thelarger the resistance of the transistor is. Based upon this, in thisembodiment, the voltage drop value of the transistor can be adjusted. Inpreparation, this embodiment can be obtained by only changing the areaof the light-shielding region of the photomask corresponding to thesource of the clock input transistor in the different GOA units.

In one embodiment, the contact area between the source of the clockinput transistor of the pull-up module in the GOA unit m1 and the activelayer is smaller than the contact area between the source of the clockinput transistor of the pull-up module in the GOA unit m2 and the activelayer. Under the condition that active layer parameters, gateparameters, drain parameters (including material resistivity, area, andthickness), and source parameters (including material resistivity, area,and thickness) are the same, the smaller the contact area between thesource and the active layer the area is, the greater the resistance ofthe transistor is. Based upon this, in this embodiment, the voltage dropvalue of the transistor can be adjusted. In preparation, this embodimentcan be obtained by only changing an area of the light-transmissionregions of the photomask corresponding to a source connection via holeof the clock input transistor in the different GOA units.

In an embodiment, an area of the drain of the clock input transistor ofthe pull-up module in the GOA unit m1 is larger than an area of thedrain of the clock input transistor of the pull-up module in the GOAunit m2. Under the condition that active layer parameters, gateparameters, source parameters (including material resistivity, area, andthickness), and partial drain parameters (including materialresistivity, and thickness) are the same, the larger the area of thedrain is, the larger the resistance of the transistor is. Based uponthis, in this embodiment, the voltage drop value of the transistor canbe adjusted. In preparation, this embodiment can be obtained by onlychanging the area of the light-shielding region of the photomaskcorresponding to the drain of the clock input transistor in thedifferent GOA units.

In one embodiment, the contact area between the drain of the clock inputtransistor of the pull-up module in the GOA unit m1 and the active layeris smaller than the contact area between the drain of the clock inputtransistor of the pull-up module in the GOA unit m2 and the activelayer. Under the condition that active layer parameters, gateparameters, drain parameters (including material resistivity, area, andthickness), and source parameters (including material resistivity, area,and thickness) are the same, the smaller the contact area between thedrain and the active layer the area is, the greater the resistance ofthe transistor is. Based upon this, in this embodiment, the voltage dropvalue of the transistor can be adjusted. In preparation, this embodimentcan be obtained by only changing an area of the light-transmissionregions of the photomask corresponding to a drain connection via hole ofthe clock input transistor in the different GOA units.

In an embodiment, material resistivity of a source drain layer of theclock input transistor of pull-up module in the GOA unit m1 is greaterthan material resistivity of a source drain layer of the clock inputtransistor of pull-up module in the GOA unit m2. Under the conditionthat active layer parameters, gate parameters, partial drain parameters(including area and thickness), and partial source parameters (includingarea and thickness) are the same, the greater the material resistivityof the source drain layer is, the greater the resistance of thetransistor is. Based upon this, in this embodiment, the voltage dropvalue of the transistor can be adjusted. In preparation, this embodimentcan be obtained by only using materials with different resistivities, orchanging material ratios of the materials with different resistivities.In one embodiment, materials of the source and the drain provided in thepresent disclosure include a 4-layer structure, which are titanium (Ti),aluminum (Al), copper (Cu), and titanium (Ti) in order from bottom totop. On the basis that a total layer thickness of aluminum (Al) andcopper (Cu) is constant, changing the thicknesses of aluminum (Al) andcopper (Cu) can change of the material resistivity of the source drainlayer. Since the resistivity of copper is smaller than the resistivityof aluminum, when the metal layer is being deposited, a thick aluminumlayer is deposited for the source drain layer of the clock inputtransistor of the pull-up module in the GOA unit m1, and a thin aluminumlayer is deposited for the source drain layer of the clock inputtransistor of the pull-up module in the GOA unit m2, thereby realizingthis embodiment.

In an embodiment, a thickness of a source drain layer of the clock inputtransistor of pull-up module in the GOA unit m1 is smaller than athickness of a source drain layer of the clock input transistor ofpull-up module in the GOA unit m2. Under the condition that active layerparameters, gate parameters, partial drain parameters (includingresistivity and area), and partial source parameters (includingresistivity and area) are the same, the smaller the thickness of thesource drain layer is, the greater the resistance of the transistor is.Based upon this, in this embodiment, the voltage drop value of thetransistor can be adjusted. In preparation, this embodiment can beobtained by only depositing materials of the source and the drain withdifferent thicknesses in different regions.

Moreover, as the resolution of the display panel increases, compensationin real time is required for the signal output by the GOA unit. Based onthis, an embodiment of the present disclosure also provides a GOAcircuit. The GOA circuit provided by the embodiment of the presentdisclosure includes m stage GOA units, as shown in FIG. 7 , wherein theGOA unit n includes a pull-up control module 701, a logical addressingmodule 702, a pull-up module 703, a first pull-down module 704, a secondpull-down module 705, a third pull-down module 706, a first pull-downmaintenance module 707, and a second pull-down maintenance module 708.

The pull-up control module 701 is connected to a first node Q, and isconfigured to pull up a potential of the first node Q during a displayperiod.

The logical addressing module 702 includes a second node M. The logicaladdressing module is connected to the first node, is configured to pullup a potential of the second node twice during the display period, andpull up the potential of the first node by the second node during ablank period.

The pull-up module 703 is connected to the first node Q, and isconfigured to pull up a potential of a stage n stage transmission signalCout (n), a first output signal WR (n), and a second output signal RD(n).

The first pull-down module 704 is connected to the first node Q and isconfigured to pull down the potential of the first node Q during theblank period.

The second pull-down module 705 is connected to the first node Q and athird node QB, and is configured to pull down the potential of the firstnode Q and a potential of the third node QB respectively during thedisplay period.

The third pull-down module 706 is connected to the third node QB and thesecond pull-down module 705, and is configured to pull down thepotential of the third node QB during the blank period.

The first pull-down maintenance module 707 includes third node QB. Thefirst pull-down maintenance module 707 is connected to the first node Qand the first pull-down module 704 for maintaining the low potential ofthe first node Q.

The second pull-down maintaining module 708 is connected to the thirdnode QB and the pull-up module 703, and is configured to maintain thelow potential of the stage n stage transmission signal Cout (n), thefirst output signal WR (n) and the second output signal RD (n).

It is required for the display panel to pass through a display period(Programing) and a blank period (Blank) when displaying images, whereinthe display period is an actual display period of each frame image, andthe blank period is the time period between the actual display periodsof the sequential frame images.

In the embodiment as shown in FIG. 7 , a tenth transistor T23, aneleventh transistor T22, and a twelfth transistor T21 in the pull-upmodule 703 are the above clock input transistors. In the embodiment asshown in FIG. 7 , it is required for the clock driving chip to input 3clock signals CKa, CKb and CKc to the same GOA unit. At this time, eachclock signal line in FIG. 6 is divided into 3 sub-clock signal lines fortransmitting CKa, CKb And CKc, and each clock signal connection line isdivided into three sub-clock signal connection lines, respectivelyconnecting the clock signals CKa, CKb, and CKc to the correspondingclock input transistors.

In this embodiment, the potential of the second node M is raised twiceduring the display period, so that the charging rate of the first node Qis ensured during the blank period, thereby increasing the thresholdvoltage margin allowed by the GOA circuit, increasing the stability ofthe GOA circuit, and reducing the development difficulty in thetransistor manufacturing process.

As shown in FIG. 7 , the pull-up control module 701 includes a firsttransistor T11 and a second transistor T12. A gate and a first electrodeof the first transistor T11 and a gate of the second transistor T12 areconnected to a stage n−2 stage transmission signal Cout (n−2), a secondelectrode of the first transistor T11 is connected to a first electrodeof the second transistor T12, and a second electrode of the secondtransistor T12 is connected to the first node Q.

The logical addressing module 702 includes a third transistor T91, afourth transistor T92, a fifth transistor T71, a sixth transistor T72, aseventh transistor T73, an eighth transistor T81, a ninth transistor T91and a first storage capacitor Cbt3. A gate of the third transistor ofT91 is connected to the stage n−2 stage transmission signal Cout (n−2),A first electrode of the third transistor T91 is connected to a firstlow potential signal VGL1, A second electrode of the third transistorT91 is connected to a first electrode of the fourth transistor T92. Agate and a second electrode of the fourth transistor T92 are bothconnected to a high potential signal VGH. A gate of the fifth transistorT71 is connected to a first input signal LSP. A first electrode of thefifth transistor T71 is connected to the stage n−2 stage transmissionsignal Cout (n−2). A second electrode of the fifth transistor T71 isconnected to A first electrode of the sixth transistor T72 and a firstelectrode of the seventh transistor T73. A gate of the sixth transistorT72 is connected to the first input signal. A second electrode of thesixth transistor T72 and a gate of the seventh transistor T73 are bothconnected to the second node M. A second electrode of the seventhtransistor T73 is connected to the high potential signal VGH. A gate ofthe eighth transistor T81 is connected to the second node M. A firstelectrode of the eighth transistor T81 is connected to the highpotential signal VGH. A second electrode of the eighth transistor T81 isconnected to a first electrode of the ninth transistor T91. A gate ofthe ninth transistor T91 is connected to a reset signal (Total-Reset). Asecond electrode of the ninth transistor T91 is connected to the firstnode Q. A first plate of the first storage capacitor Cbt3 is connectedto the second electrode of the third transistor T91. A second plate isconnected to the second node M.

The pull-up module 703 includes a tenth transistor T23, an eleventhtransistor T22, a twelfth transistor T21, a thirteenth transistor T6, asecond storage capacitor Cbt1 and a third storage capacitor Cbt2. A gateof the tenth transistor T23, a gate of the eleven transistor T22, and agate of the twelfth transistor T21 are all connected to the first nodeQ. A first electrode of the tenth transistor T23 is connected to thefirst clock signal CKa. A second electrode of the tenth transistor T23is connected to the stage n stage transmission signal Cout (n). A firstelectrode of the eleventh transistor T22 is connected to the secondclock signal CKb. A second electrode of the eleventh transistor T22 isconnected to the first output signal WR (n). A first electrode of thetwelfth transistor T21 is connected to the third clock signal CKc. Asecond electrode of the twelfth transistor T21 is connected to thesecond output signal RD (n). A gate of the thirteenth transistor T6 isconnected to the first node Q. A first electrode of the thirteenthtransistor T6 is connected to the fourth node N. A second electrode ofthe thirteenth transistor T6 is connected to the first output signal WR(n). A first plate of the second storage capacitor Cbt1 is connected tothe first node Q. A second plate is connected to the first output signalWR (n). A first plate of the third storage capacitor Cbt2 is connectedto the first node Q. A second plate is connected to the second outputsignal RD (n).

The first pull-down module 704 includes a fourteenth transistor T33 anda fifteenth transistor T34. A gate of the fourteenth transistor T33 anda gate of the fifteenth transistor T34 are both connected to a secondinput signal VST. A first electrode of the fourteenth transistor T33 isconnected to the first node Q. A second electrode of the fourteenthtransistor T33 is connected to a first electrode of the fifteenthtransistor T34 and the fourth node N. A second electrode of thefifteenth transistor T34 is connected to the first low potential signalVGL1.

The second pull-down module 705 includes a sixteenth transistor T31, aseventeenth transistor T32, and an eighteenth transistor T55. A gate ofthe sixteenth transistor T31 and a gate of the seventeenth transistorT32 are connected to a stage n+2 stage transmission signal Cout(n+2). Afirst electrode of the sixteenth transistor T31 is connected to a firstnode Q. A second electrode of the sixteenth transistor T31 is connectedto a first electrode of the seventeenth transistor T32 and the fourthnode N. A second electrode of the seventeenth the transistor T32 isconnected to the first low potential signal VGL1. A gate of theeighteenth transistor T55 is connected to the stage n−2 stagetransmission signal Cout (n−2). A first electrode of the eighteenthtransistor T55 is connected to a second low potential signal VGL2. Afirst electrode of the eighteenth transistor T55 is connected to thethird node QB.

The third pull-down module 706 includes a nineteenth transistor T102 anda twentieth transistor T101. A gate of the nineteenth transistor T102 isconnected to the second node. A first electrode of the nineteenthtransistor T102 is connected to the second low potential signal VGL2. Asecond electrode of the nineteenth transistor T102 is connected to afirst electrode of the twentieth transistor T101. A gate of thetwentieth transistor T101 is connected to the reset signal(Total-Reset). A second electrode of the twentieth transistor T101 isconnected to the third node QB.

The first pull-down sustaining module 707 includes a twenty-firsttransistor T44, a twenty-second transistor T45, a twenty-thirdtransistor T51, a twenty-fourth transistor T52, a twenty-fifthtransistor T53, and a twenty-sixth transistor T54. A gate of thetwenty-first transistor T44 and a gate of the twenty-second transistorT45 are connected to the third node QB. A first electrode of thetwenty-first transistor T44 is connected to the first node Q. A secondelectrode of the twenty-first transistor T44 is connected to a firstelectrode of the twenty-second transistor T45 and the fourth node N. Asecond electrode of the twenty-second transistor T45 is connected to thefirst low potential signal VGL1. A gate and a first electrode of thetwenty-third transistor T51 is connected to the high potential signalVGH. A second electrode of the twenty-third transistor T51 is connectedto a first electrode of the twenty-fourth transistor T52. A gate of thetwenty-fourth transistor T52 is connected to the first node Q. A secondelectrode of the twenty-fourth transistor T52 is connected to the secondlow potential signal VGL2. A gate of the twenty-fifth transistor T53 isconnected to a second electrode of the twenty-third transistor T51. Afirst electrode of the twenty-fifth transistor T53 is connected to thehigh potential signal VGH. A second electrode of the twenty-fifthtransistor T53 is connected to a first electrode of the twenty-sixthtransistor T54 and the third node QB. A gate of the twenty-sixthtransistor T54 is connected to the first node Q. A second electrode ofthe twenty-sixth transistor T54 is connected to the second low potentialsignal VGL2.

The second pull-down maintenance module 708 includes a twenty-seventhtransistor T43, a twenty-eighth transistor T42, and a twenty-ninthtransistor T41. A gate of the twenty-seventh transistor T43, a gate ofthe twenty-eighth transistor T42, and a gate of the twenty-ninthtransistor T41 are connected to the third node QB. A first electrode ofthe twenty-seventh transistor T43 is connected to the firstlow-potential signal VGL1. A second electrode of the twenty-seventhtransistor T43 is connected to the stage n stage transmission signalCout (n). A first electrode of the twenty-eighth transistor T42 isconnected to the third low potential signal VGL3. A second electrode ofthe twenty-eighth transistor T42 is connected to the first output signalWR (n). A first electrode of the twenty-ninth transistor T41 isconnected to the third low potential signal VGL3. A second electrode ofthe twenty-ninth transistor T41 is connected to the second output signalRD (n).

In the GOA circuit of the present disclosure, there are m stage GOAunits, in which the stage transmission signal output by the stage n GOAunit is the stage n stage transmission signal Cout (n), 2≤n≤m, and n isan integer. The stage n−2 stage transmission signal Cout(n−2) is thestage transmission signal 2 stages before the n stage transmissionsignal Cout (n), (1 stage interval therebetween), and the stage n+2stage transmission signal Cout (n+2) is the stage transmission signal 2stages before the stage n cascade signal Cout (n), (1 stage intervaltherebetween).

In the GOA circuit of the present disclosure, the first input signalLSP, the second input signal VST, and the reset signal Total-Reset areall provided by an external timing device.

The GOA circuit provided in this embodiment is a real-time compensationcircuit, wherein it is required for the GOA to output a normal drivetiming display image in the display period corresponding to each frame,and to output a wide pulse timing for the threshold voltage Vthdetection in the blank period between each frame. FIG. 8A shows thetiming of the signals of the GOA circuit in the embodiment of thepresent disclosure in the display period (Programing) and the blankperiod (Blank), wherein the voltage setting values of the signals athigh potentials and low potentials are as shown in Table 1.

TABLE 1 Setting voltage GOA signal Low potential High potential Cout(n −2) −13 +20 Cout(n + 2) −13 +20 LSP −13 +20 VST −13 +20 Total-Reset −13+20 CKa −13 +20 CKb −13 +20 CKc −13 +20 VGH +20 VGL1 −13 VGL2 −10 VGL3 −6

The operation of the GOA circuit in the display period and the blankperiod is described in detail below with reference to FIG. 8B and FIG.8C.

As shown in FIG. 8B, the display period includes a first display stageS1, a second display stage S2, a third display stage S3, a fourthdisplay stage S4, and a fifth display stage S5.

In the first display stage S1, the stage n−2 stage transmission signalCout (n−2) rises to a high potential, the first transistor T11 and thesecond transistor T12 are turned on, the first node Q is pulled up to ahigh potential, and the twenty-fourth transistor T52, the twenty-sixthtransistor T54, the tenth transistor T23, the eleventh transistor T22and the twelfth transistor T21 are turned on. Because the connectionbetween the first node Q and the third node QB constitutes an inverterstructure, and the potentials thereof are opposite, the third node QB isat a low potential, the twenty-seventh transistor T43, the twenty-eighthtransistor T42, the twenty-ninth transistor T41, the twenty-firsttransistor T44, and the twenty-second transistor T45 are all turned off,at the same time, the stage n+2 stage transition signal Cout (n+2) is ata low potential, the sixteenth transistor T31 and the seventeenthtransistor T32 are turned off, the second input signal VST is at a lowpotential, and the fourteenth transistor T33 and the fifteenthtransistor T34 are turned off. The first timing signal CKa, the secondtiming signal CKb, and the third timing signal CKc are at lowpotentials, and the stage n stage transmission signal Cout (n), thefirst output signal WR (n), and the second output signal RD (n) are atlow potentials. Since the stage n−2 stage transmission signal Cout (n−2)is at a high potential, the third transistor T91 is turned on, a point Pconnected to the first plate of the first storage capacitor Cbt3 isreset to a low potential, and, at the same time, a point M connected tothe second plate is at a low potential.

In the second display stage S2, the first input signal LSP rises to ahigh potential, at this time, the stage n−2 stage transmission signalCout (n−2) maintains a high potential, the second node M is raised to ahigh potential, and the fourth transistor T92 is turned on, the point Pmaintains a low potential. Because the reset signal Total-Rest, thesecond input signal VST, and other signals are at low potentials, thefirst node Q maintains a high potential, and the third node QB maintainsa low potential.

In the third display stage S3, the first input signal LSP is reducedfrom a high potential to a low potential, the fifth transistor T71 andthe sixth transistor T72 are turned off, the stage n−2 stagetransmission signal Cout (n−2) changes from a high potential to a lowpotential, therefore, the third transistor T91 is turned off, and thepotential at the point P is switched from a low potential to a highpotential. Due to the presence of the first storage capacitor Cbt3, thesecond node M is coupled and raised to a higher potential. The firsttiming signal Cka, the second timing signal CKb, and the third timingsignal CKc change from a low potential to a high potential, so thepotentials of the stage n stage transmission signal Cout (n), the firstoutput signal WR (n), and the second output signal RD (n) are alsoraised to high potentials. At the same time, due to the presence of thesecond storage capacitor Cbt1 and the third storage capacitor Cbt2, thefirst node Q is coupled to a high potential.

In the fourth display stage S4, the first timing signal Cka, the secondtiming signal CKb, and the third timing signal CKc are switched from ahigh potential to a low potential, the potentials of the stage n stagetransmission signal Cout (n), the first output signal WR (n), and thesecond output signal RD (n) are pulled to a low potential, and thesignal coupling of the first node Q decreases to the potential at thesecond display stage S2.

In the fifth display stage S5, the stage n+2 stage transmission signalCout (n+2) rises from a low potential to a high potential, the sixteenthtransistor T31 and the seventeenth transistor T32 are turned on, thepotential of the first node Q is pulled down to the low potential, thetwenty-fourth transistor T52, the twenty-sixth transistor T54, the tenthtransistor T23, the eleventh transistor T22 and the twelfth transistorT21 are turned off, the potential of the third node QB is raised to ahigh potential, the twentieth-seven transistor T43, the twenty-eighthtransistor T42, the twenty-ninth transistor T41, the twenty-firsttransistor T44 and the twenty-second transistor T45 are all turned on,and the first node Q, the stage n stage transmission signal Cout (n),the first output signal WR (n), and the second output signal RD (n)maintain low potentials.

As shown in FIG. 8C, the blank period includes a first blank stage B1, asecond blank stage B2, a third blank stage B3, and a fourth blank stageB4.

In the first blank stage B1, the reset signal (Total Reset) rises to ahigh potential, the ninth transistor T82 is turned on, the potential ofthe first node Q is pulled to a high potential, the twenty-fourthtransistor T52, the twenty-sixth transistor T54, the tenth transistorT23, the eleventh transistor T22, and the twelfth transistor T21 areturned on. Because the connection between the first node Q and the thirdnode QB constitutes an inverter structure, and the potentials thereofare opposite, the third node QB is at a low potential, thetwenty-seventh transistor T43, the twenty-eighth transistor T42, thetwenty-ninth transistor T41, the twenty-first transistor T44, and thetwenty-second transistor T45 are all turned off, at the same time, thestage n+2 stage transition signal Cout (n+2) is at a low potential, thesixteenth transistor T31 and the seventeenth transistor T32 are turnedoff, the second input signal VST is at a low potential, and thefourteenth transistor T33 and the fifteenth transistor T34 are turnedoff. The first timing signal CKa, the second timing signal CKb, and thethird timing signal CKc are at low potentials, and the stage n stagetransmission signal Cout (n), the first output signal WR (n), and thesecond output signal RD (n) are at low potentials.

In the second blank stage B2, the reset signal (Total Reset) reduces toa low potential, the ninth transistor T82 is turned off, the firsttiming signal Cka maintains a low potential, the second timing signalCKb and the third timing signal CKc rise to a high potential, and thestage n stage transmission signal Cout (n) maintains a low potential,and the first output signal WR (n) and the second output signal RD (n)are at high potentials. The first node Q is coupled to a high potential.

In the third blank stage B3, the second input signal VST rises from alow potential to a high potential, the fourteenth transistor T33 and thefifteenth transistor T34 are turned on, the potential of the first nodeQ is pulled down to a low potential, the twenty-fourth transistor T52,the twenty-sixth transistor T54, the tenth transistor T23, the eleventhtransistor T22 and the twelfth transistor T21 are turned off, thepotential of the third node QB is raised to a high potential, thetwentieth-seven transistor T43, the twenty-eighth transistor T42, thetwenty-ninth transistor T41, the twenty-first transistor T44 and thetwenty-second transistor T45 are all turned on, the first node Q, thefirst output signal WR (n) and the second output signal RD (n) arepulled down to a low potential, and the stage n stage transmissionsignal Cout (n) maintains a low potential.

In the fourth blank stage B4, the first input signal LSP rises to a highpotential, and the fifth transistor T71 and the sixth transistor T72 areturned on. Because the stage n−2 stage signal Cout (n−2) is at a lowpotential, the second node M is reset to a low potential, and the eighthtransistor T81 is turned off. The first node Q, the stage n stagetransmission signal Cout (n), the first output signal WR (n), and thesecond output signal RD (n) maintain low potentials.

The GOA circuit provided by the embodiment of the present disclosure isa real-time compensation type GOA circuit. Through the above process, adriving signal is provided for the scanning line, so that the displaypanel displays images.

In the above process, the third transistor T91 and the fourth transistorT92 are disposed on a side near the first plate of the first storagecapacitor Cbt3. In the first display stage S1, the third transistor T91and the fourth transistor T92 are both turned on, so that the potentialsof the point P and the second node M are at low potentials. In thesecond display stage S2, the third transistor T91 and the fourthtransistor T92 are both turned on, the point P maintains at a lowpotential, and the second node M is pulled up for the first time. In thethird display stage S3, the third transistor T91 is turned off, thefourth transistor T92 is turned on, and the potential of the point P ispulled up. Due to the coupling effect, the potential of the second nodeM is pulled up for a second time. Therefore, in the first blank stageB1, the potential of the first node Q is pulled higher than that of theprior art, and the charging rate is ensured, thereby increasing thethreshold voltage margin allowed by the GOA circuit, increasing thestability of the GOA circuit, and reducing the development difficulty inthe transistor manufacturing process.

The present disclosure provides an electronic device including a displaypanel provided by the above embodiments:

In an embodiment, the electronic device includes a display panel. Thedisplay panel includes:

m GOA units arranged in a column direction, wherein each of the GOAunits includes a pull-up module, and each of the pull-up modulesincludes a clock input transistor connected to a clock signal;

n clock signal lines extending in the column direction and arranged inparallel; and

m clock signal connection lines extending in a row direction andarranged in parallel, wherein the n clock signal connection lines haveone-to-one correspondence to the GOA units, for connecting the clockinput transistor of the pull-up module in each of the GOA units to acorresponding one of the clock signal lines;

wherein the clock signal lines include an clock signal line n1 and anclock signal line n2, the clock signal line n2 is formed near a side ofthe clock signal line n1 away from the GOA units, and a voltage dropvalue connected to the clock input transistor of the pull-up module inthe GOA unit m1 of the clock signal line n1 is greater than a voltagedrop value connected to the clock input transistor of the pull-up modulein the GOA unit m2 of the clock signal line n2.

In the electronic device of an embodiment, a size of the clock inputtransistor of the pull-up module in the GOA unit m1 is larger than asize of the clock input transistor of the pull-up module in the GOA unitm2.

In the electronic device of an embodiment, each of the clock inputtransistors includes a plurality of sub-transistors connected in anarray, and a number of the sub-transistors of the clock input transistorof the pull-up module in the GOA unit m1 is greater than a number of thesub-transistors of the clock input transistor of the pull-up module inthe GOA unit m2.

In the electronic device of an embodiment, an area of a source of theclock input transistor of the pull-up module in the GOA unit m1 islarger than an area of a source of the clock input transistor of thepull-up module in the GOA unit m2; and/or an area of a drain of theclock input transistor of the pull-up module in the GOA unit m1 islarger than an area of a drain of the clock input transistor of thepull-up module in the GOA unit m2.

In the electronic device of an embodiment, a contact area between asource of the clock input transistor of the pull-up module in the GOAmodule m1 and an active layer is smaller than that a contact areabetween a source of the clock input transistor of the pull-up module inthe GOA module m2 and the active layer.

In the electronic device of an embodiment, the GOA unit n includes:

a pull-up control module connected to a first node, and configured topull up a potential of the first node during a display period;

a logical addressing module including a second node, wherein the logicaladdressing module is connected to the first node, is configured to pullup a potential of the second node twice during the display period, andpull up the potential of the first node by the second node during ablank period;

the pull-up module connected to the first node and configured to pull upa potential of a stage n stage transmission signal, a first outputsignal and a second output signal;

a first pull-down module connected to the first node, and configured topull down the potential of the first node during the blank period;

a second pull-down module connected to the first node and a third node,and configured to pull down the potential of the first node and apotential of the third node respectively during the display period;

a third pull-down module connected to the third node and the secondpull-down module, and configured to pull down the potential of the thirdnode during the blank period;

a first pull-down maintenance module including the third node, whereinthe first pull-down maintenance module is connected to the first nodeand the first pull-down module for maintaining the low potential of thefirst node;

a second pull-down maintenance module connected to the third node andthe pull-up module, and configured to maintain the low potential of thestage n stage transmission signal, the first output signal, and thesecond output signal.

In the electronic device of an embodiment, the pull-up control moduleincludes a first transistor and a second transistor; a gate and a firstelectrode of the first transistor and a gate of the second transistorall are connected to a stage n−2 signal transmission; a second electrodeof the first transistor is connected to a first electrode and a fourthnode of the second transistor; and a second electrode of the secondtransistor is connected to the first node.

In the electronic device of an embodiment, material resistivity of asource drain layer of the clock input transistor of the pull-up modulein the GOA unit m1 is greater than material resistivity of a sourcedrain layer of the clock input transistor of the pull-up module in theGOA unit m2.

In the electronic device of an embodiment, a thickness of a source drainlayer of the clock input transistor of the pull-up module in the GOAunit m1 is smaller than a thickness of a source drain layer of the clockinput transistor of the pull-up module in the GOA unit m2.

In the electronic device of an embodiment, a contact area between asource of the clock input transistor of the pull-up module in the GOAmodule m1 and an active layer is smaller than that a contact areabetween a source of the clock input transistor of the pull-up module inthe GOA module m2 and the active layer.

Based upon the above embodiments, it is known that:

The present disclosure provides a display panel and an electronicdevice. The display panel includes a first substrate; a second substratedisposed opposite the first substrate; a support pillar formed on thefirst substrate; and a liquid crystal filled in a sealed space formedbetween the first substrate and the second substrate; wherein in acontact region contacting the support pillar, a contact layer of thefirst substrate contacting the support pillar forms aprotrusion-depression pattern, and the protrusion-depression patternincreases a contact area between the contact layer and the supportpillar. Based on this structure, the contact area between the supportpillar and the bottom layer is increased, and there is no need to changethe size of the single sub-pixel, thereby alleviating the technicalproblem of the existing 8K ultra-high-resolution electronic device thatthe support pillar easily peels off. Moreover, the clock signal linesinclude an clock signal line n1 and an clock signal line n2, the clocksignal line n2 is formed near a side of the clock signal line n1 awayfrom the GOA units, and a voltage drop value connected to the clockinput transistor of the pull-up module in the GOA unit m1 of the clocksignal line n1 is greater than a voltage drop value connected to theclock input transistor of the pull-up module in the GOA unit m2 of theclock signal line n2. Based on this circuit structure, by adjusting thevoltage drop values of the clock input transistors in different GOAunits, the voltage drop values caused by the different lengths of theclock signal lines and the clock signal connection lines arecompensated, so that the voltage drop value between each GOA unit andthe clock driving chip is approximately the same, thereby alleviatingthe CK impedance difference existing in the 8K ultra-high resolutionelectronic device, and improving the technical problem of the differenceof the output signal of the GOA units existing in the 8K ultra-highresolution electronic device.

The display panel and the electronic device provided by the embodimentsof the present disclosure are described in detail above. Specificexamples are used herein to explain the principles and implementationsof the present disclosure. The descriptions of the above embodiments areonly used to help understand the technical solutions and core ideas ofthe present disclosure. Those of ordinary skill in the art shouldunderstand that t the technical solutions described in the foregoingembodiments can still be modified, or some of the technical features canbe equivalently replaced. These modification and replacement does notdeviate the essence of the corresponding technical solutions from thescope of the technical solutions of the embodiments of the presentdisclosure.

What is claimed is:
 1. A display panel comprising: a first substrate; asecond substrate disposed opposite the first substrate; a support pillarformed on the first substrate; and a liquid crystal filled in a sealedspace formed between the first substrate and the second substrate;wherein in a contact region contacting the support pillar, a contactlayer of the first substrate contacting the support pillar forms aprotrusion-depression pattern, the protrusion-depression patternincreases a contact area between the contact layer and the supportpillar, and the protrusion-depression pattern includes a target patternformed by at least one of protrusions, depressions, or a combination ofprotrusions and depressions of the contact layer; in a non-display area,the display panel is also provided with: m GOA units arranged in acolumn direction, wherein each of the GOA units includes a pull-upmodule, and each of the pull-up modules includes a clock inputtransistor connected to a clock signal; n clock signal lines extendingin the column direction and arranged in parallel; and m clock signalconnection lines extending in a row direction and arranged in parallel,wherein the clock signal connection lines have one-to-one correspondenceto the GOA units, for connecting the clock input transistor of thepull-up module in each of the GOA units to a corresponding one of theclock signal lines; wherein the n clock signal lines include a clocksignal line n1 and a clock signal line n2, the clock signal line n2 isformed near a side of the clock signal line n1 away from the GOA units,and a voltage drop value connected to the clock input transistor of thepull-up module in the GOA unit m1 of the clock signal line n1 is greaterthan a voltage drop value connected to the clock input transistor of thepull-up module in the GOA unit m2 of the clock signal line n2, andwherein the GOA unit n includes: a pull-up control module connected to afirst node, and configured to pull up a potential of the first nodeduring a display period; a logical addressing module including a secondnode, wherein the logical addressing module is connected to the firstnode, is configured to pull up a potential of the second node twiceduring the display period, and pull up the potential of the first nodeby the second node during a blank period; the pull-up module connectedto the first node and configured to pull up a potential of a stage nstage transmission signal, a first output signal and a second outputsignal; a first pull-down module connected to the first node, andconfigured to pull down the potential of the first node during the blankperiod; a second pull-down module connected to the first node and athird node, and configured to pull down the potential of the first nodeand a potential of the third node respectively during the displayperiod; a third pull-down module connected to the third node and thesecond pull-down module, and configured to pull down the potential ofthe third node during the blank period; a first pull-down maintenancemodule including the third node, wherein the first pull-down maintenancemodule is connected to the first node and the first pull-down module formaintaining the low potential of the first node; a second pull-downmaintenance module connected to the third node and the pull-up module,and configured to maintain the low potential of the stage n stagetransmission signal, the first output signal, and the second outputsignal.
 2. The display panel as claimed in claim 1, wherein each of theclock input transistors includes a plurality of sub-transistorsconnected in an array, and a number of the sub-transistors of the clockinput transistor of the pull-up module in the GOA unit m1 is greaterthan a number of the sub-transistors of the clock input transistor ofthe pull-up module in the GOA unit m2.
 3. The display panel as claimedin in claim 2, wherein a contact area between a drain of the clock inputtransistor of the pull-up module in the GOA module m1 and an activelayer is smaller than that a contact area between a drain of the clockinput transistor of the pull-up module in the GOA module m2 and theactive layer.
 4. The display panel as claimed in claim 1, wherein thefirst substrate includes a base substrate, a black matrix formed on thebase substrate, and a color filter layer formed on the black matrix, anda support pillar formed on the color filter layer and located in aregion where the color filter layer overlaps the black matrix, and thecolor filter layer has a protrusion-depression pattern formed in thecontact region contacting the support pillar.
 5. The display panel asclaimed in claim 4, wherein the black matrix also forms aprotrusion-depression pattern in the contact region between the colorfilter layer and the support pillar.
 6. The display panel as claimed inclaim 1, wherein the first substrate includes a base substrate, a drivecircuit layer formed on the base substrate, and a planarization layerformed on the drive circuit layer; wherein the support pillar is formedon the planarization layer, and the planarization layer has theprotrusion-depression pattern in the contact region contacting thesupport pillar.
 7. The display panel as claimed in claim 1, wherein thefirst substrate includes a base substrate, a drive circuit layer formedon the base substrate, a color resist layer formed on the drive circuitlayer, and a planarization layer formed on the color resist layer;wherein the support pillar is formed on the planarization layer, and theplanarization layer has a protrusion-depression pattern in the contactregion contacting the support pillar.
 8. The display panel as claimed inclaim 7, wherein the color resist layer also forms aprotrusion-depression pattern in the contact region between theplanarization layer and the support pillar.
 9. The display panel asclaimed in claim 1, wherein a shape of the target pattern is a grid. 10.An electronic device comprising a display panel comprising: m GOA unitsarranged in a column direction, wherein each of the GOA units includes apull-up module, and each of the pull-up modules includes a clock inputtransistor connected to a clock signal; n clock signal lines extendingin the column direction and arranged in parallel; and m clock signalconnection lines extending in a row direction and arranged in parallel,wherein the n clock signal connection lines have one-to-onecorrespondence to the GOA units, for connecting the clock inputtransistor of the pull-up module in each of the GOA units to acorresponding one of the clock signal lines; wherein the clock signallines include an clock signal line n1 and an clock signal line n2, theclock signal line n2 is formed near a side of the clock signal line n1away from the GOA units, and a voltage drop value connected to the clockinput transistor of the pull-up module in the GOA unit m1 of the clocksignal line n1 is greater than a voltage drop value connected to theclock input transistor of the pull-up module in the GOA unit m2 of theclock signal line n2, and wherein the GOA unit n includes: a pull-upcontrol module connected to a first node, and configured to pull up apotential of the first node during a display period; a logicaladdressing module including a second node, wherein the logicaladdressing module is connected to the first node, is configured to pullup a potential of the second node twice during the display period, andpull up the potential of the first node by the second node during ablank period; the pull-up module connected to the first node andconfigured to pull up a potential of a stage n stage transmissionsignal, a first output signal and a second output signal; a firstpull-down module connected to the first node, and configured to pulldown the potential of the first node during the blank period; a secondpull-down module connected to the first node and a third node, andconfigured to pull down the potential of the first node and a potentialof the third node respectively during the display period; a thirdpull-down module connected to the third node and the second pull-downmodule, and configured to pull down the potential of the third nodeduring the blank period; a first pull-down maintenance module includingthe third node, wherein the first pull-down maintenance module isconnected to the first node and the first pull-down module formaintaining the low potential of the first node; a second pull-downmaintenance module connected to the third node and the pull-up module,and configured to maintain the low potential of the stage n stagetransmission signal, the first output signal, and the second outputsignal.
 11. The electronic device as claimed in claim 10, wherein a sizeof the clock input transistor of the pull-up module in the GOA unit m1is larger than a size of the clock input transistor of the pull-upmodule in the GOA unit m2.
 12. The electronic device as claimed in claim11, wherein each of the clock input transistors includes a plurality ofsub-transistors connected in an array, and a number of thesub-transistors of the clock input transistor of the pull-up module inthe GOA unit m1 is greater than a number of the sub-transistors of theclock input transistor of the pull-up module in the GOA unit m2.
 13. Theelectronic device as claimed in claim 11, wherein an area of a source ofthe clock input transistor of the pull-up module in the GOA unit m1 islarger than an area of a source of the clock input transistor of thepull-up module in the GOA unit m2; and/or an area of a drain of theclock input transistor of the pull-up module in the GOA unit m1 islarger than an area of a drain of the clock input transistor of thepull-up module in the GOA unit m2.
 14. The electronic device as claimedin claim 11, wherein a contact area between a source of the clock inputtransistor of the pull-up module in the GOA module m1 and an activelayer is smaller than a contact area between a source of the clock inputtransistor of the pull-up module in the GOA module m2 and the activelayer.
 15. The electronic device as claimed in claim 11, wherein acontact area between a source of the clock input transistor of thepull-up module in the GOA module m1 and an active layer is smaller thana contact area between a source of the clock input transistor of thepull-up module in the GOA module m2 and the active layer.
 16. Theelectronic device as claimed in claim 10, wherein the pull-up controlmodule includes a first transistor and a second transistor; a gate and afirst electrode of the first transistor and a gate of the secondtransistor all are connected to a stage n−2 signal transmission; asecond electrode of the first transistor is connected to a firstelectrode and a fourth node of the second transistor; and a secondelectrode of the second transistor is connected to the first node. 17.The electronic device as claimed in claim 10, wherein materialresistivity of a source drain layer of the clock input transistor of thepull-up module in the GOA unit m1 is greater than material resistivityof a source drain layer of the clock input transistor of the pull-upmodule in the GOA unit m2.
 18. The electronic device as claimed in claim10, wherein a thickness of a source drain layer of the clock inputtransistor of the pull-up module in the GOA unit m1 is smaller than athickness of a source drain layer of the clock input transistor of thepull-up module in the GOA unit m2.